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首页> 外文OA文献 >Enhanced electron lifetime of CdSe/CdS quantum dot (QD) sensitized solar cells using ZnSe core-shell structure with efficient regeneration of quantum dots
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Enhanced electron lifetime of CdSe/CdS quantum dot (QD) sensitized solar cells using ZnSe core-shell structure with efficient regeneration of quantum dots

机译：使用ZnSe核壳结构并有效再生量子点，提高了CdSe / CdS量子点（QD）敏化太阳能电池的电子寿命

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Research on development of efficient passivation materials for high performance and stable quantum dot sensitized solar cells (QDSCs) is highly important. While ZnS is one of the most widely used passivation material in QDSCs, an alternative material based on ZnSe which was deposited on CdS/CdSe/TiO2 photoanode to form a semi-core/shell structure has been found to be more efficient in terms of reducing electron recombination in QDSCs in this work. It has been found that the solar cell efficiency was improved from 1.86% for ZnSe0 (without coating) to 3.99% using 2 layers of ZnSe coating (ZnSe2) deposited by successive ionic layer adsorption and reaction (SILAR) method. The short circuit current density (Jsc) increased nearly 1-fold (from 7.25 mA/cm2 to13.4 mA/cm2), and the open circuit voltage (Voc) was enhanced by 100 mV using ZnSe2 passivation layer compared to ZnSe0. Studies on the light harvesting efficiency (ηLHE) and the absorbed photon-to-current conversion efficiency (APCE) have revealed that the ZnSe coating layer caused the enhanced ηLHE at wavelength beyond 500 nm and a significant increase of the APCE over the spectrum 400-550 nm. A nearly 100% APCE was obtained with ZnSe2, indicating the excellent charge injection and collection process in the device. The investigation on charge transport and recombination of the device has indicated that the enhanced electron collection efficiency and reduced electron recombination should be responsible for the improved Jsc and Voc of the QDSCs. The effective electron lifetime of the device with ZnSe2 was nearly 6 times higher than ZnSe0 while the electron diffusion coefficient was largely unaffected by the coating. Study on the regeneration of QDs after photoinduced excitation has indicated that the hole transport from QDs to the reduced species (S2-) in electrolyte was very efficient even when the QDs were coated with a thick ZnSe shell (three layers). For comparison, ZnS coated CdS/CdSe sensitized solar cell with optimum shell thickness was also fabricated, which generated a lower energy conversion efficiency (η = 3.43%) than the ZnSe based QDSC counterpart due to a lower Voc and FF. This study suggests that ZnSe may be a more efficient passivation layer than ZnS, which is attributed to the type II energy band alignment of the core (CdS/CdSe quantum dots) and passivation shell (ZnSe) structure, leading to more efficient electron-hole separation and slower electron recombination.
机译：研究用于高性能和稳定量子点敏化太阳能电池（QDSC）的高效钝化材料非常重要。尽管ZnS是QDSC中最广泛使用的钝化材料之一，但发现在还原方面，替代的基于ZnSe的替代材料沉积在CdS / CdSe / TiO2光电阳极上以形成半核/壳结构是一种更有效的方法。这项工作中的QDSC中的电子重组。已经发现，使用通过连续的离子层吸附和反应（SILAR）方法沉积的两层ZnSe涂层（ZnSe2），太阳能电池效率从ZnSe0（无涂层）的1.86％提高到3.99％。与ZnSe0相比，使用ZnSe2钝化层的短路电流密度（Jsc）增加了近1倍（从7.25 mA / cm2到13.4 mA / cm2），并且开路电压（Voc）提高了100 mV。对光收集效率（ηLHE）和吸收的光子至电流转换效率（APCE）的研究表明，ZnSe涂层在500 nm以上的波长下引起增强的ηLHE，并且在400-光谱范围内APCE显着增加550纳米ZnSe2可获得近100％的APCE，表明该器件具有出色的电荷注入和收集过程。对器件的电荷传输和复合的研究表明，增强的电子收集效率和减少的电子复合应负责改善QDSC的Jsc和Voc。具有ZnSe2的器件的有效电子寿命是ZnSe0的近6倍，而电子扩散系数在很大程度上不受涂层的影响。对光诱导激发后的量子点再生的研究表明，即使量子点被厚厚的硒化锌壳（三层）覆盖，电解质中从量子点到空穴的还原态（S2-）的空穴传输也非常有效。为了进行比较，还制造了具有最佳外壳厚度的ZnS涂层CdS / CdSe敏化太阳能电池，由于其Voc和FF较低，与基于ZnSe的QDSC相比，其能量转换效率较低（η= 3.43％）。这项研究表明，ZnSe可能是比ZnS更有效的钝化层，这归因于核（CdS / CdSe量子点）和钝化壳（ZnSe）结构的II型能带对准，从而导致了更有效的电子空穴分离和较慢的电子重组。

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